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FMA246
HIGH GAIN X-BAND MMIC AMPLIFIER
FEATURES:
* * * * * * * 8.0 - 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current DC De-coupled Input and Output Ports
Preliminary Datasheet v3.0
LAYOUT:
GENERAL DESCRIPTION:
The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The supply voltage can be varied from +3V to +6V if needed. Operating current can be adjusted using the source resistor ladders located along the bottom edge, by bonding a particular pad to ground. The amplifier is unconditionally stable over all load states (-45 to +85C), and conditionally stable if the input port is opencircuited.
TYPICAL APPLICATIONS:
* * Low noise front end amplifiers General X-Band gain block
ELECTRICAL SPECIFICATIONS1:
PARAMETER
Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure
SYMBOL
BW S21 IOP S21 NF
CONDITIONS
MIN
8
TYP
N/A 29 150 0.6
MAX
14 31 195 1.0 2.8 -
UNITS
GHz dB mA dB dB dBc
VDD = +6 V IDD 60% IDSS VDD = +6V VDD = +6 V IDD 60% IDSS VDD = +6 V IDD 60% IDSS VDD = +6 V IDD 60% IDSS POUT = +9 dBm SCL VDD = +6 V IDD 60% IDSS VDD = +6 V IDD 60% IDSS VDD = +6 V IDD 60% IDSS VDD = +6 V IDD 60% IDSS 2 2 2 2 2 2 2
27 105
-
2.5 -44
3rd Order Intermodulation Distortion Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation
IMD P1dB S11 S22 S12
18 -
20 -10 -16 -60
-8 -9 -50
dBm dB dB dB
Note: 1. TAmbient = 22C; Continuous operation at IDSS is not recommended 2. 60%IDSS is achieved by bonding pads "D", "G", and "K" (shown on page 2) to ground to drive the 1st, 2nd and 3rd stage amplifiers at 50%IDSS, 50%IDSS, and 75%IDSS respectively.
1
Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
FMA246
Preliminary Datasheet v3.0
ABSOLUTE MAXIMUM RATING1:
PARAMETER
Supply Voltage Supply Current RF Input Power Storage Temperature Total Power Dissipation Gain Compression Simultaneous Combination of Limits 4 2,3
SYMBOL
VDD IDD PIN TSTG PTOT Comp.
TEST CONDITIONS
For any operating current For VDD < 7V For standard bias conditions Non-Operating Storage See De-Rating Note below Under any bias conditions 2 or more Max. Limits
ABSOLUTE MAXIMUM
8V 75% IDSS -8dBm -40C to 150C 1400mW 5dB 80%
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power 3 Total Power Dissipation to be de-rated as follows above 22C: PTOT= 1.4 - (0.004W/C) x TCARRIER where TCARRIER= carrier or heatsink temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C carrier temperature: PTOT = 1.4 - (0.004 x (55 - 22)) = 1.26W 4 Users should avoid exceeding 80% of 2 or more Limits simultaneously 5 For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW) 6 Thermal Resistivity: The nominal value of 250C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80C/W.
PAD LAYOUT:
C
A
PAD NAME
IN
DESCRIPTION
PIN COORDINATES (m)
104, 836 1962, 822 770, 1522 415/556/696,143
RFIN ROUT
A
B
B
B
C D-F
VD
Drain Voltage Stage 1: Source bias resistors Stage 2: Source bias resistors Stage 3: Source bias resistors
D EFGH I J K L
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening
G-I
821/962/1102,143
J-L
1234/1374/1513, 143
DIE SIZE (m)
1624 x 2050
DIE THICKNESS (m)
100
MIN. BOND PAD PITCH (m)
100
MIN. BOND PAD OPENING (m x m )
100 x 100
2
Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
FMA246
Preliminary Datasheet v3.0
TYPICAL MEASURED PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22C unless otherwise stated; (VDD = +6V, IDD = IOP)
FMA246 Noise Figure
3.00
Noise Figure (dB)
2.80 2.60 2.40 2.20 2.00 1.80 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz)
N.F. (dB)
3
Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
FMA246
Preliminary Datasheet v3.0
RECOMMENDED ASSEMBLY SCHEMATIC:
Note: 1 The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. 2 The configuration shown below will result in operating current bias levels of approximately (for each stage) 50% / 50% / 75%, which is the standard recommended bias setting for the MMIC. For lower current operation, the 3rd stage can be set to 50% by bonding to the pad just to the left of the pad that is bonded in the drawing below (marked "3"), in the right-most set of three bias pads. These number markings are the resistor values (Ohms) between the pads.
4
Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
FMA246
Preliminary Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. For eutectic die attach the maximum time at 280-300C is 60 seconds, and should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device model are available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION:
PART NUMBER
FMA246
DESCRIPTION
Die
5
Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com

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